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Transphorm Adds Industry Standard TO-263 (D2PAK) to Its Surface Mount Package Offerings, Extending the Benefits of the SuperGaN Platform

New 50 mOhm SuperGaN FET simplifies and accelerates the development of higher power GaN-based systems for data centers and large industrial applications

GOLETA, Calif., July 13, 2022–(BUSINESS WIRE)–Transphorm, Inc. (Nasdaq: TGAN)—a pioneer and global provider of high-reliability, high-performance gallium nitride (GaN)-based power conversion products—announced today the expansion of its surface-mount enclosure offerings with the addition of TP65H050G4BS. The new higher power Surface Mount Device (SMD) is a 650V SuperGaN® FET in TO-263 (D2PAK) offering a typical on-state resistance of 50 milliohms. This is Transphorm’s seventh SMD, adding to a wide range of PQFN devices currently available for low to mid-power applications.

The JEDEC-qualified TP65H050G4BS offers several advantages to designers and manufacturers developing high-power (one to several kilowatt) systems typically used in data centers and large industrial applications. It offers Transphorm’s reliability, gate robustness (±20Vmax) and noise immunity threshold (4V) of silicon, along with the ease of design and manageability synonymous with its GaN technology. Engineers use the larger D2PAK when a more powerful, surface-mount package is needed, allowing better thermal performance over. PQFN-style packages while increasing PCB assembly efficiency through the use of a unique manufacturing flow.

Available as a discrete device, the D2PAK is also supplied on a vertical daughterboard to increase Transphorm’s power density. TDTTP2500B066B-KIT—a 2.5 kW AC-to-DC bridgeless totem pole power factor correction (PFC) evaluation board. It can also be replaced by the 1.2 kW synchronous half-bridge TDHBG1200DC100-KIT evaluation board for driving several kilowatts of power.

“The D2PAK is an important addition to our portfolio. It extends the usability of our CMSs to high-powered applications where previously we supported them with through-hole devices,” said Philip Zuk, Senior Vice President of Global Marketing, Applications and Business Development, Transphorme. “This is another step in helping customers leverage the benefits of our GaN platform with familiar TO-XXX packages that eliminate design challenges, simplify system development and speed time to market.

Transphorm is the only GaN vendor currently offering high voltage GaN devices in standard TO-XXX packages. Notably, these packages cannot be used with alternative e-mode GaN technology given its inherent gate susceptibility to damage.


The device and evaluation boards mentioned above are available from Digi-Key and Mouser via the links below:

About Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance, high reliability GaN semiconductors for high voltage power conversion applications. With one of the largest Power GaN intellectual property portfolios of over 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high-voltage GaN semiconductor devices. The company’s vertically integrated device business model enables innovation at every stage of development: design, manufacturing, device and application support. Transphorm’s innovations move power electronics beyond the limits of silicon to achieve over 99% efficiency, 40% more power density and 20% less system cost. Transphorm is headquartered in Goleta, California, and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit Follow us on twitter @transphormusa and WeChat@Transphorm_GaN.

The SuperGaN trademark is a registered trademark of Transphorm, Inc. All other trademarks are the property of their respective owners.

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