Industry standard

Mitsubishi Electric Expands Line of Silicon Carbide Power Devices with Industry-Standard Dual Device

CYPRESS, Calif.–(BUSINESS WIRE)–Mitsubishi Electric US, Inc. recently released a new FMF400DY-24B silicon carbide (SiC) power module. The 400A, 1200V Dual SiC MOSFET Module features an anti-parallel, low Vf, zero recovery loss, SiC SBD (Schottky Barrier Diode). The module packs new designs into a current industry standard footprint (62mm x 108mm) for medical power supplies and general industrial applications. Designed for Vgs(on)=15V, the module is compatible with standard IGBT gate drivers and can be integrated seamlessly into existing mechanical setups for easy upgrades from Si IGBT technologies.

The module uses Mitsubishi Electric’s second-generation SiC MOSFET chip technologies, ideal for applications requiring high switching frequencies. The SiC module reduces power loss by approximately 70% compared to a Si IGBT of the same rating.

“This new module is in a classic package, with the latest technology inside for superior functionality and flexibility,” said Adam Falcsik, senior product manager of Power Device Group, Mitsubishi Electric US. “The FMF400DY-24B adds to Mitsubishi Electric’s growing line of SiC products.”

In addition to superior efficiency, the module complies with Directive 2011/65/EU and (EU) 2015/863 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS) in order to comply with critical environmental regulations. The module reinforces Mitsubishi Electric’s core technology vision by contributing to a smarter and more sustainable society.

For more information on Mitsubishi Electric products, see catalog or visit our website.

About Mitsubishi Electric US, Inc., Semiconductor & Device Division

The Semiconductor & Device Division of Mitsubishi Electric US, Inc. offers a portfolio of semiconductors and electronic devices that help advance information processing, telecommunications and efficient energy use. The division’s next-generation optical devices, high frequency gallium nitride, gallium arsenide and silicon RF devices are used in a range of applications such as data centers, satellite base stations and two-way radios to support today’s rapidly changing telecommunications networks. The division offers state-of-the-art CIS line scanners for industrial image output and image processing. Additionally, the division provides highly efficient power modules for traditional and renewable energy sources that distribute power efficiently and reliably. More information available at https://meus-semiconductors.com/.